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Effect Of Gallium Doping And Ball Milling Process

Mar 23 2010 Ga doping in indium zinc oxide IZObased amorphousoxide semiconductors AOSs promotes the formation of oxidelattice structures with oxygen vacancies at low annealing temperatures which is essential for acceptable thinfilmtransistor performance see figure The mobility dependence on annealing temperature and AOS composition are analyzed and the chemical role of Ga is

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